대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

IGBT 순방향 전압강하의 계산

Calculation of Forward Voltage Drop of IGBTs

  • 최병성 (아주대 대학원 전자공학과 졸업) ;
  • 정상구 (아주대 공대 전자공학과)
  • 발행 : 2000.03.01
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⟨ 이전 논문 다음 논문 ⟩

초록

A simple methode for calculating the forward voltage drop of IGBTs is presented, on the voltage drops on the p+ body, the reverse biased depletion region between p+body and epi-layer, the epi layer, and the forward biased collector junction. The decrease of the total current density in the epi layer near the p+ body is taken into account. The proposed methode allows a simple but accurate determination of the forward voltage drop in IGBTs, avoiding the complex path taken in the previous model for the forward voltage drops on channel, accumulation region, and epi region. Numerical simulations for 1kV NPT-IGBT with a uniformly doped collector are shown to support the analytical results.

키워드

참고문헌

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