Abstract
The uniformity of temperature on a wafer is one of the most important parameters to control the RTP (Rapid Thermal Process) with proper input signals. Since it is impossible to achieve the uniformity of temperature without exact estimation of temperature at all points on the wafer, the difficulty of understanding internal dynamics and structural complexities of the RTP is a primary obstacle to accurately measure the distributed temperatures on the wafer. Furthermore, it is also hard to accomplish desirable estimation because only few pyrometers have been commonly available in the general equipments. In the paper, a thermal model based on the chamber geometry of the AST SHS200 RTP system is developed to effectively control the thermal uniformity on the wafer. First of all, the estimation method of one-point measurement is developed, which is properly extended to the case of multi-point measurements. This thermal model is validated through certain simulation and experiments. The work can be usefully contributed to building a run-by-run or a real-time controls of the RTP.
