대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

Silicon Carbide 쇼트기 정류기의 모델링

Modeling the Silicon Carbide Schottky Rectifiers

  • 발행 : 2000.02.01
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초록

The closed-form analytic solutions for the breakdown voltage of 6H-SiC RTD(silicon carbide reachthrough diode) having metal$-n^--n^+$ Schottky structure or $p^+-n^--n^+$, are successfully derived by solving impact ionization integral using an effective ionization coefficient. For the lightly doped n- epitaxial layer, the breakdown voltage of SiC RTD are nearly constant with the increased doping concentration while the breakdown voltages decrease for the heavily doped epitaxial layer.

키워드

참고문헌

  1. B. J. Baliga, Modern Power Devices, Jone Wiley & Sons, 1987
  2. J.W. Palmour, et al., Silicon carbide for power devices, Proc. ISPSD'97, pp. 25-32, 1997 https://doi.org/10.1109/ISPSD.1997.601423
  3. Dae-Seok Byeon, Min-Koo Han and Yearn-Ik Choi, Analytical solution of the breakdown voltage for 6H-silicon carbide $p^+n$ junction, J. Appl. Phys., Vol.79, No.5, pp. 2796-2797, 1996 https://doi.org/10.1063/1.361113