The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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Numerical Analyses on Snapback-Free Shorted-Anode SOI LIGBT by using a Floating Electrode and an Auxiliary Gate

플로우팅 전극과 보조 게이트를 이용하여 스냅백을 없앤 애노드 단락 SOI LIGBT의 수치 해석

  • Published : 2000.02.01
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Abstract

A dual-gate SOI SA-LIGBT (shorted-anode lateral insulated gate bipolar transistor) which eliminates the snapback effectively is proposed and verified by numerical simulation. The elimination of the snapback in I-V characteristics is obtained by initiating the hole injection at low anode voltage by employing a dual gate and a floating electrode in the proposed device. For the proposed device, the snapback phenomenon is completely eliminate, while snapback of conventional SA-LIGBT occurs at anode voltage of 11 V. Also, the drive signals of two gates have same polarity by employing the floating electrode, thereby requiring no additional power supply.

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References

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