전기화학회지 (Journal of the Korean Electrochemical Society)
- 제3권4호
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- Pages.200-203
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- 2000
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- 1229-1935(pISSN)
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- 2288-9000(eISSN)
DOI QR Code
Crystalline Growth Properties of Diamond Thin Film Prepared by MPCVD
- Park Soo-Gil (Dept. of Industrial Chemical Engneering, Chungbuk National University) ;
- Kim Gyu-Sik (Dept. of Industrial Chemical Engneering, Chungbuk National University) ;
- Einaga Yasuaki (Dept. of Applied Chemistry, School of Engineering, The University of Tokyo) ;
- Fujishima Akira (Dept. of Applied Chemistry, School of Engineering, The University of Tokyo)
- 발행 : 2000.11.01
초록
Microwave plasma chemical vapor deposition을 이용하여 붕소가 도핑된 전도성 다이아몬드 박막을 제조하였다. 탄소원으로는 아세톤과 메탄올을 사용하였으며, 붕소원으로는
Boron doped conducting diamond thin films were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was ca.
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