RF magnetron 스파터링법으로 제작한 TiN_x 박막의 면저항분석

Sheet Reisistance Analysis of TiN_x Thin Film by RF Magnetron Sputtering

RF(radio-frequency) magnetron 스퍼터링 장치에 질소가스와 아르곤가스를 동시에 주입하면서 Ti 타켓을 스퍼터링하여 TiN, 박막을 유리기판위에 제작하였다. 박막제작시 RF power supply 출력은 240W로, 증착기 내부의 온도는 $200^{\circ}C$를 유지하였다. TiN, 박막은 알곤 가스를 20sccm으로 고정시킨 상태에서 질소를 3sccm부터 9secm까지 변화시켜가며 증착시켰다. 이때 박막의 면저항과 화학적 조성과의 관계를 분석하기 위하여 XPS depth profiling과 4점 탐침법을 사용하였다.

The TiN, thin films were prepared on glass substrate by RF(radio-frequency) magnetron sputtering apparatus from a Ti target in a gaseous mixture of argon and nitrogen. In deposition, a RF power supply was used as a power source with a constant power of 240W, and the substrate was heated to $200^{\circ}C$. The films were obtained at nitogen flow rates in the range 3-9 sccm with a constant argon flow rate of 20 secm. For the films obtained, the sheet resistance and the chemical binding energy of the films was observed by four-point-probe method and x-ray photoelectron spectroscopy(XPS) depth profiling respectively. In addition, we investigated the relationship between the surface resistance and the chemical nature of the films.