The Electric Breakdown Chatacteristics of Polyimide Thin Films by Self Healing Method

자기절연회복법에 의한 폴리아미드 박막의 절연파괴특성

  • Kim, Hyeong-Gweon (Department of Electrical Engineering, Inha University) ;
  • Lee Eun-Hak (Department of Electrical Engineering, Hanlla University) ;
  • Park, Jong-Kwan (Department of Information & Communications, Yuhan College)
  • 김형권 (仁荷大學校 電氣科) ;
  • 이은학 (한라大學校 電氣電子컴퓨터工學部) ;
  • 박종관 (유한大學 情報通信科)
  • Published : 1999.06.01

Abstract

The polymide thin films were fabricated by vapor deposition polymerized method of dry processes and studied the electric breakdown characteristics by self healing method. Polyamic-acid(PAA) thin films prepared by vapor deposition-polymerization (VDP) from PMDA(Pyromellitic dianhydride) and DDE(4,4'-diaminodiphenyl ether) were changed to PI thin films by thermal curing. In the same sample, electric breakdown fields increase with increasing test number, and then saturated over test number of the 25th. When the curing temperatures were 200$^{\circ}C$, 250$^{\circ}C$, 300$^{\circ}C$ and 350$^{\circ}C$, the electric breakdown strengths of PI were 1.21MV/cm, 3.94MV/cm, 4.61MV/cm and 4.55MV/cm at the test number of 40th.

본 연구는 진공증착중합법에 의해 폴리이미드를 제작하고 박막의 절연파괴특성을 자기절연회복법에 의해 측정하였다. PMDA(Pyromellitic dianhydride)와 DDE(4,4'-diaminodiphenyl ether)를 증착 중합하여 Polyamic-acid(PAA)를 형성하고 이를 열처리함으로서 폴리이미드를 제조하였다. 제조된 박막의 특성을 조사하기 위해 주사형 전자현미경(SEM), 적외선분광장치(FT-IR) 및 오저전자분광장치(AES)를 사용하였다. 절연파괴특성 실험은 동일 시료에서 50회를 반복하였으며 25회 이상에서 절연파괴전계는 포화되었다. 열처리 온도를 200${^\circ}C$, 250$^{\circ}C$, 300$^{\circ}C$ 및 350${^\circ}C$로 변화했을 때 절연파괴전계는 1.21MV/cm, 3.94MV/cm, 4.61MV/cm, 4.55MV/cm로 변화하였다.

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