전자공학회논문지D (Journal of the Korean Institute of Telematics and Electronics D)
- 제36D권7호
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- Pages.17-25
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- 1999
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- 1226-5845(pISSN)
$Si_3N_4$ 기판 위에 PECVD 법으로 형성한 Tungsten Nitride 박막의 특성
Characteristic of PECVD-$WN_x$ Thin Films Deposited on $Si_3N_4$ Substrate
-
배성찬
(慶北大學敎 電子
${\cdot}$ 電氣工學部) ; -
박병남
(慶北大學敎 電子
${\cdot}$ 電氣工學部) ; -
손승현
(慶北大學敎 電子
${\cdot}$ 電氣工學部) ; -
이종현
(慶北大學敎 電子
${\cdot}$ 電氣工學部) ; -
최시영
(慶北大學敎 電子
${\cdot}$ 電氣工學部)
- Bae, Seong-Chan (School of Electronic & Engineering, Kyungpook National University) ;
- Park, Byung-Nam (School of Electronic & Engineering, Kyungpook National University) ;
- Son, Seung-Hyun (School of Electronic & Engineering, Kyungpook National University) ;
- Lee, Jong-Hyun (School of Electronic & Engineering, Kyungpook National University) ;
- Choi, Sie-Young (School of Electronic & Engineering, Kyungpook National University)
- 발행 : 1999.07.01
초록
PECVD 법을 이용하여 Tungsten Nitride(
Tungsten nitride(
키워드