Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Photoelectrochemical Property of Ti(IV)-Fe(III) Oxide Films Deposited by MOCVD

MOCVD법에 의한 Ti(IV)-Fe(III) 산화물 박막의 광전기화학적 특성

  • 김현수 (동북공업기술연구소 환경재료연구실) ;
  • 윤재홍 (창원대학교 공과대학 금속재료공학과)
  • Published : 1999.08.01
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Abstract

Ti(IV)-Fe(III) oxide films were formed by MOCVD technique, and their photoelectrochemical properties were examined in 0.5M N $a_2$$SO_4$ solution by a photoelectrochemical polarization test. Ti(IV)-Fe(III) oxide films deposited at 40$0^{\circ}C$ by MOCVD have crystalline structure and are all n-type semiconductors. The photocurrent and the quantum efficiency of the films increase with increasing the iron cationic fraction ($X_{Fe}$ ) in the films. The energy band gap of the films increase linearly with increasing the iron cationic fraction in the films. Ti(IV)-Fe(III) oxide film of $X_{Fe}$ /=0.60 has high photocurrent response and corrosion resistance simultaneously.

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