한국표면공학회지 (Journal of the Korean institute of surface engineering)
- 제32권3호
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- Pages.416-422
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- 1999
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
A Study of Dry Etch Mechanism of the GaN using Plasma Mass Spectrometry
- Kim, H.S. (Dept. of Materials Engineering, Sungkyunkwan University) ;
- Lee, W.J. (Dept. of Materials Engineering, Sungkyunkwan University) ;
- Jang, J.W. (Dept. of Materials Engineering, Sungkyunkwan University) ;
- Yeom, G.Y. (Dept. of Materials Engineering, Sungkyunkwan University) ;
- Lee, J.W. (Photonics Lab., Samsung Advanced Institute of Technology) ;
- Kim, T.I. (Photonics Lab., Samsung Advanced Institute of Technology)
- 발행 : 1999.06.01
초록
The characteristics of inductively coupled Cl