Journal of the Korean institute of surface engineering (한국표면공학회지)
- Volume 32 Issue 3
- /
- Pages.416-422
- /
- 1999
- /
- 1225-8024(pISSN)
- /
- 2288-8403(eISSN)
A Study of Dry Etch Mechanism of the GaN using Plasma Mass Spectrometry
- Kim, H.S. (Dept. of Materials Engineering, Sungkyunkwan University) ;
- Lee, W.J. (Dept. of Materials Engineering, Sungkyunkwan University) ;
- Jang, J.W. (Dept. of Materials Engineering, Sungkyunkwan University) ;
-
Yeom, G.Y.
(Dept. of Materials Engineering, Sungkyunkwan University) ;
- Lee, J.W. (Photonics Lab., Samsung Advanced Institute of Technology) ;
- Kim, T.I. (Photonics Lab., Samsung Advanced Institute of Technology)
- Published : 1999.06.01
Abstract
The characteristics of inductively coupled Cl