Journal of the Korean Society of Safety (한국안전학회지)
- Volume 14 Issue 3
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- Pages.69-77
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- 1999
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- 1738-3803(pISSN)
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- 2383-9953(eISSN)
Characteristics of Electrostatic Attenuation in Semiconductor
반도체 소자의 정전기 완화특성
Abstract
As the use of automatic handling equipment for sensitive semiconductor devices is rapidly increased, manufacturers of electronic components and equipment need to be more alert to the problem of electrostatic discharges(ESD). Semiconductor devices such as IC, LSI, VLSI become a high density pattern of being more fragile by ESD phenomena. One of the most common causes of electrostatic damage is the direct transfer of electrostatic charge from the human body or a charged material to the electrostatic discharge sensitive devices. Accordingly, characteristics of electrostatic attenuation in domestic semiconductor devices is investigated to evaluate the ESD phenomina in the semiconductors in this paper. The required data are obtained by Static Honestmeter. Also The results in this paper can be used for the prevention of semiconductor failure by ESD.
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