한국진공학회지 (Journal of the Korean Vacuum Society)
- 제8권3B호
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- Pages.290-296
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- 1999
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- 1225-8822(pISSN)
저압 MOCVD 방법으로 성장된 InAlAs 에피층에서 상분리와 규칙 현상의 관찰
Observation of phase separation and ordering in the InAlAs epilayer grown on InP by MOCVD
-
조형균
(한국과학기술원 재료공학과) ;
- 이번 (한국전자통신연구원 원천기술부) ;
-
백종협
(한국전자통신연구원 원천기술부) ;
-
한원석
(한국전자통신연구원 원천기술부) ;
-
이정용
(한국과학기술원 재료공학과) ;
- 권명석 (한국과학기술원 재료공학과)
-
Cho, Hyung-Koun
(Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
- Lee, Bun (Electronics and Telecommunications Research Institute) ;
-
Baek, Jong-hyeob
(Electronics and Telecommunications Research Institute) ;
-
Han, Won-Seok
(Electronics and Telecommunications Research Institute) ;
-
Lee, Jeong-Yong
(Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
- Kwon, Myoung-Seok (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
- 발행 : 1999.08.01
초록
We have studied the phase separation and ordering phenomeon of InAlAs epilayers grown on InP substrate by LP-MOCVD with DCXRD, PL, and TEM. From the intensity and FWHM of DCXRD and PL, we observed that the structural and optical quality of InAlAs epilayers were improved as growth temperature increased. The band-gap reduction due to phase separation and ordering is 291, 246, and 28 meV in the InAlAs epilayers grown at
키워드