Modification and adhesion improvement of BN interfacial layers by Post-N+ implantation

질소 이온주입법에 의한 BN 박막의 계면구조 개선 및 밀착력 향상

  • 변응선 (한국기계연구원 표면기술연구부, 한국과학기술연구원) ;
  • 이성훈 (한국기계연구원 표면기술연구부, 한국과학기술연구원) ;
  • 이상로 (한국기계연구원 표면기술연구부, 한국과학기술연구원) ;
  • 이구현 (한국기계연구원 표면기술연구부, 한국과학기술연구원) ;
  • 한승희 (소재특성평가센터) ;
  • 이응직 ((주) 선익) ;
  • 윤재홍 (창원대학교 재료공학과)
  • Published : 1999.03.01

Abstract

The post ion implantation has been applied to modify early-grown BN layer and improve the adhesion of the BN films. The effect of ion implantation doses on microstructure and interlayer was investigated by FTIR and HRTEM. And the hardness and delamination life time of N+-implanted BN films were measured. With increasing the ion dose up to $5.0\times10^{15}\textrm{atoms/cm}^2$,the change of IR spectrum is observed. At $5.0\times10^{16}\textrm{atoms/cm}^2$, a drastic transition of cubic phase into hexagonal phase is detected. The change of microstructure of early-grown layers by ion implantation is confirmed using HRTEM. Both microhardness and delamination life time of BN films increase with ion dose. The modification model of early-grown BN layers is briefly discussed based on the displacement per atom and excess boron in the BN film induced by ion irradiation.

Keywords