한국진공학회지 (Journal of the Korean Vacuum Society)
- 제8권4A호
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- Pages.490-495
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- 1999
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- 1225-8822(pISSN)
건식각을 이용한 $0.18\mu\textrm{m}$ dual polysilicon gate 형성 및 plasma damage 특성 평가
Study of plasma induced charging damage and febrication of$0.18\mu\textrm{m}$ dual polysilicon gate using dry etch
초록
In 0.18
키워드