한국진공학회지 (Journal of the Korean Vacuum Society)
- 제8권4A호
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- Pages.476-481
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- 1999
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- 1225-8822(pISSN)
극저온 자화 유도 결합 플라즈마를 이용한 Platinum 식각에 관한 연구
A study on platinum dry etching using a cryogenic magnetized inductively coupled plasma
초록
Characteristics of platinum dry etching were investigated in a cryogenic magnetized inductively coupled plasma (MICP). The problem with platinum etching is the redeposition of sputtered platinum on the sidewall. Because of the redeposits on the sidewall, the etching of patterned platinum structure produces feature sizes that exceed the original dimension of the PR size and the etch profile has needle-like shape [1]. The main object of this study was to investigate a new process technology for fence-free Pt etching As bias voltage increased, the height of fence was reduced. In cryogenic etching, the height of fence was reduced to 20% at-
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