The composition control of ITO/PET by plasma emission monitor

PEM을 이용한 ITO/PET film의 조성 제어

  • 한세진 (홍익대학교 금속재료공학과) ;
  • 김용환 (한국과학기술원 신소재공학과) ;
  • 김영환 (홍익대학교 금속재료공학과) ;
  • 이택동 (한국과학기술원 신소재공학과)
  • Published : 1999.11.01

Abstract

The characterization of the reactively sputtered ITO layer on the PET film has been studied. The PEM device has been used to determine the optimum stoichimetry through control of the amount of oxygen incorporated into the alloy target and the optimum operation conditions to produce films with the highest electrical conductivity and visible transparency. The PEP film was pre-treated under the plasma discharge condition to remove the adsorbed gases and to modify the surface morphology. The results revealed that by adjusting the flow rate of oxygen with the spectral intensity of indium target, the composition of plasma gas can be kept constant during the entire deposition period. The resistivity of ITO film obtained was fond to be about 37$\Omega\Box$, and the transmittance of visual range was about 86%.

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