Deposition of PbTio3 thin films by reactive sputtering

PbTio3 is a promising material with perovskite structure for pyroelectric sensor applications with its superior pyroelectric properties, low dielectric constants, and low piezoelectric constants. Growth of pyroelectric thin films in general, needs relatively higher temperatures than those of conventional Si semiconductor processing However, low growth temperature is advantageous for the device integration. We report the low temperature (350$^{\circ}C$) growth of PbTio3 thin films by 3-gun DC magnetron reactive sputtering. The effects of substrate temperature, Pb-flux, and total pressure on crystalinity and preferred orientation of PbTio3 thin films are reported.