Growth of Er : $LiNbO_{3}$ single crystal thin film with high crystal quality by LPE method

  • Tong-Ik Shin (School of Metallurgical and Materials Engineering, Sungkyunkwan University) ;
  • Hyun Lee (School of Metallurgical and Materials Engineering, Sungkyunkwan University) ;
  • Joong-Won Shur (School of Metallurgical and Materials Engineering, Sungkyunkwan University) ;
  • Byungyou Hong (School of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Dae-Ho Yoon (School of Metallurgical and Materials Engineering, Sungkyunkwan University)
  • Published : 1999.06.01

Abstract

High quality of $Er_{2}O_{3}$ doped $LiNbO_{3}$ single crystal thin films were grown by the liquid phase epitaxial (LPE) method using $Er_{2}O_{3}$ doped at concentrations of 1,3, and 5 mol% respectively. After the growth of single crystal thin film, the crystallinity and the lattice mismatch along the c-axis between the film and the substrate was examined as a function of the variations of{{{{{Er}_{2}{O}_{3}}}}} dopant concentration using a X-ray double crystal technique. There was no lattice mismatch along the c-axis for the undoped film and those doped with 1 and 3 mol% of $Er_{2}O_{3}$. For 5 mol% of $Er_{2}O_{3}$ doped film, the lattice mismatch was $7.86{\times}10^{-4}$nm along the c-axis.

Keywords

References

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