The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Dry Etching Characteristics of GaN using a Planar Inductively Coupled CHsub $CH_4/H_2/Ar$ Plasma

평판 유도 결합형 $CH_4/H_2/Ar$ 플라즈마를 이용한 GaN 건식 식각 특성

  • 김문영 (경북대 전기공학과 대학원) ;
  • 백영식 (경북대 전자전기공학부 정) ;
  • 태흥식 (경북대 전자전기공학부) ;
  • 이용현 (경북대 전기전자공학부 정) ;
  • 이정희 (경북대 전기전자공학부) ;
  • 이호준 (위덕대 전기공학과)
  • Published : 1999.09.01
Download PDF
⟨ Previous Next ⟩

Abstract

A planar inductively coupled $CH_4/H_2/Ar$plasma was used to investigate dry etch characteristics of GaN as a function of input power, RF bias power, and etch gas composition. Etch rate of GaN increased with input power up to 600 W and was saturated at the higher power. Also, the etch rates increased with increasing RF bias power, composition of $CH_4$ and Ar gas. We achieved the maximum etch rate of $930{\AA}$/min at the input power 400 W, RF bias power 250 W, and operational pressure 10 mTorr. This paper shows that smooth etched surface having roughness less than 1 nm in rms can be obtained by using planar inductively coupled plasma with $CH_4/H_2/Ar$ gas chemistry.

Keywords

References

  1. Applied Physics Letters v.68 Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodes H.C. Casey
  2. Applied Physics Letters v.70 Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes C.J. Sun
  3. Applied Physics Letters v.69 Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes S. Nakamura
  4. Electronics Letters v.32 no.15 Comparison of dry etch techniques for GaN R.J. Shul
  5. Journal of Applied Physics v.80 Cl₂/Ar and CH₄/H₂/Ar dry etching of Ⅲ-Ⅴ nitrides C.B. Vartuli
  6. Journal of Electrochemical Society v.144 no.8 Inductively Coupled Plasma Etching of Ⅲ-Ⅴ Nitrides in CH₄/H₂/Ar and CH₄/H₂/N₂ Chemistries S.J. Pearton
  7. Journal of Electronic Materials v.25 no.5 Dry Etching of GaN Using Chemically Assisted Ion Beam Etching with HCI and H₂/Cl₂ A.T. Ping
  8. Applied Physics Letters v.69 Inductively coupled plasma etching of GaN R.J. Shul
  9. Applied Physics Letters v.66 High etch rates of GaN with magnetron reactive ion etching in BCI₃ plasmas G.F. McLane
  10. Applied Physics Letters v.68 Electron cyclotron resonance etching characteristics of GaN in SiCl₄/Ar L. Zhang
  11. Applied Physics Letters v.67 Reactive ion etching of GaN using CHF₃/Ar and $C_{2}DIF_{5}/Ar$ plasmas Heon Lee
  12. Japanese Journal of Applied Physics v.34 Gate Electrode Etching Using a Transformer Coupled Plasma Kazuyoshi Yoshida
  13. Plasma Source Science Technology v.5 Laboratory measurements and optimization of inductively coupled loop antenna plasma source J. Menard
  14. Plasma Source for Thin Film Deposition and Etching Mauric H. Francombe;John L. Vossen
  15. Applied Physics Letters v.64 Low bias electron cyclotron resonance plasma etching of GaN, AIN, and InN S.J. Pearton
  16. Journal of Vacuum Science Technology A v.12 no.4 Magnetron enhanced reactive ion etching of GaAs in CH₄/H₂/Ar : Surface damage study G.F. McLane
  17. Applied Physics Letters v.66 High temperature electron cyclotron resonance etching of GaN, InN, and AIN R.J. Shul
  18. Journal of Vacuum Science Technology A v.11 no.4 Magnetron-enhanced reactive ion etching of GaAs and AIGaAs using CH₄/H₂/Ar G.F. McLane