The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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Effects of Boron Doping on Properties of CdS Films and Characteristics of CdS/CdTe Solar Cells

보론 도핑에 따른 CdS 박막 및 CdS/CdTe 태양전지 특성

  • 이재형 (성균관대 전기전자 및 컴퓨터공학부) ;
  • 이호열 (성균관대 전기전자 및 컴퓨터공학부) ;
  • 박용관 (성균관대 전기전자 및 컴퓨터공학부)
  • Published : 1999.08.01
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Abstract

Boron doped CdS films were prepared by chemical bath deposition using boric acid$(H_3BO_3)$ as donor dopant source, and their electrical, optical properties were investigated as a function of doping concentration. In addition, effects of boron doping of CdS films on characteristics of CdS/CdTe solar cells were investigated. Boron doping highly decreased the resistivity and slightly increased optical band gap of CdS films. The lowest value of resistivity was $2 \Omega-cm \;at\; H_3BO_3/Cd(Ac)_2$ molar ratio of 0.1. For the molar ratio more than 0.1, however, the resistivity increased because of decreasing carrier concentration and mobility and showed similar value for undoped films. The photovoltaic characteristics of CdS/CdTe solar cells with boron doped CdS film improved due to the decrease of the conduction band-Fermi level energy gap of CdS films and the series resistance of solar cell.

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References

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