Abstract
A new lateral device entitled SB-DCEST(segmented p-base dual-channel emitter switched thyristor), which suppresses the snapback is proposed and successfully fabricated. The proposed device effectively suppressed the snapback phenomenon by employing the gigh resistance in self-aligned segmented p-base when compared with the conventional DCEST. The experimental results show that the SB-DCEST has the low forward voltage drop of 4.3 V at anode current of $150 A/cm^2$ with the eliminated snap-back regime, while conventional DCEST exhibits higher forward voltage drop of 5.3 V.
