The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Structural and Dielectrical Properties of PZT(30/70)/PZT(70/30) Heterolayered Thin Film Prepared by Sol-Gel Method

Sol-Gel법으로 제작한 PZT(30/70)/PZT(70/30) 이종층 박막의 구조 및 유전특성

  • 김경균 (광운대 전자재료공학과) ;
  • 정장호 (광운대 전자재료공학과 연구원) ;
  • 이성갑 (서남대 전자전기공학부) ;
  • 이영희 (광운대 전자재료공학과)
  • Published : 1999.07.01
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Abstract

Ferroelectric PZT(30/70)/PZT(70/30) heterolayered thin films were fabricated by spin-coating method on the $Pt/Ti/SiO_2Si$ substrate alternately using(30/70) and PZT(70/30) alkoxide solutions prepared by sol-coating method. The coating and heating procedure was repeated six times to form PZT heterolayered films, and thickness of the film obtained by one-times drying/sintering process was about 40-50 nm. All PZT heterolayered films, showed dense and homogeneous structure without the presence of rosette sturctrue. The relative dielectric constant, remanent polarization and leakage current density of PZT heterolayered films were superior to those of single composition PZT(30/70) and PZT(70/30) films, and those values for the PZT-6 film were 975, $21 \muC/cm^2\; and\; 8\times10^{-9}\; A/cm^2$, respectively. And the PZT-6 heterolayered film showed fairly good fatigue characteristics of remanent polarization and coercive field after application of $10^8$ switching cycles.

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References

  1. Jap. J. Appl. Phys. v.32 no.9B Analysis of Bending Displacement of Lead Zirconate Titanate Thin Film Synthesized by Hydrothermal Method Y.Ohba;M. Miyauchi;T. Ttsurumi;M. Daimon
  2. Jap. J. Appl. Phys. v.32 no.9B Preparation and Properties of (Pb,La)TiO₃Pyroelectric Thin Films by RF-Magnetron Sputtering N. Nagao;T. Takeuchi;K. Iihima
  3. J. Am. Ceram. Soc. v.80 no.5 Influence of Crystal Structure on the Fatigue Properties of $Pb_{1-x}La_x(Zr_yTi_{1-y})O_3$ Thin Films Prepared by Pulsed-Laser Deposition Technique W. Lin;T. Tseng;S. Lin;S. Tu;S. Yang
  4. Integrated Ferroelectrics v.15 Dielectric Analysis of Integrated Ceramic Thin Film Capacitors R. Waser
  5. Jap. J. Appl. Phys. v.33 no.9B Influence of Buffer Layers on Microstructural and Ferroelectric Characteristics of Sol-Gel Derived $PbZr_xTi_{1-x}O_3$ Thin Films H. Doi;T. Atsuki;N. Soyama;G. Sasaki;K. Ogi
  6. Integrated Ferroelectrics v.14 Effect of Base Electrode on the Crystallization and Electrical Properties of PLT A. Grill;R. Laibowitz;D. Beach;D. Neumayer;P. R. Duncombe
  7. Jap. J. Appl. Phys. v.34 no.9B Electrical Properties of Pb(Zr,Ti)O₃Thin Film Capacitors on Pt and Ir Electrodes T. Nakamura;Y. Nakao;A. Kamisawa;H. Takasu
  8. J. App. Phys. v.79 no.2 Effect of B-site cation stoichiometry on electrical fatigue of $RuO_2//Pb(Zr_xTi_{1-x})O_3//RuO_2$ Capacitors H. N. Al-Shareef;B. A. Tuttle;W. L. Warren;J. A. Voigt;R. D. Nasby
  9. Jap. J. Appl. Phys. v.36 no.9B Low-Temperature Processing of Highly Oriented $Pb(Zr_xTi_{1-x})O_3$ Thin Film with Multi-Seeding Layers H. Suzuki;S. Kaneko;K. Murakami;T. Hayashi
  10. Jap. J. Appl. Phys. v.32 no.9B Low-Temperature Preparation of Pb(Zr,Ti)O₃Thin Films on (Pb,La)TiO₃Buffer Layer by Multi-Ion-Beam Sputtering I. Kanno;S. Hayashi;T. Kamada:M. Kitagawa;T. Hirao
  11. Jap. J. Appl. Phys. v.33 no.9B Control of Orientation of Pb(Zr,Ti)O₃Thin Films Using PbTiO₃Buffer Layer M. Shimizu;M. Sugiyama;H. Fujisawa;T. Shiosaki
  12. Jap. J. Appl. Phys. v.36 no.11 Dielectric Properties of Pb(Zr,Ti)O₃Heterolayered Films Prepared by Sol-Gel Method S. G. Lee;I. G. Park;S. G. Bae;Y. H. Lee
  13. Integrated Ferroelectric v.15 Nucleation and Orientation of Sol-Gel PZT Films on Pt Electrodes G. J. Willems;D. J. Wouters;H. E. Maes
  14. 한국전기전자재료학회 논문지 v.11 no.11 Sol-Gel법으로 제조한 PZT(20/80)/PZT(80/20) 이종층 박막의 유전특성 이성갑;이영희
  15. Int. Conf. on Electrical Engineering Structural and Dielectric Properties of Pb(Zr,Ti)O₃Heterolayered Films Prepared by Sol-Gel Method S. G. Lee;K. G. Kim;S. G. Bae;Y. H. Lee
  16. Proc. IEEE Symp. Application of Ferroelectric Effect of Zr/Ti Ratio on the Ferroelectric Properties of Sol-Gel Derived PZT Films G. Teowee;J. M. Boulton;M. N. Orr;S. C. Lee;K. F. Galloway;R. D. Schrimpf
  17. Jap. J. Appl. Phys. v.33 no.9B Fatigue and Refreshment of (Pb,La)TiO₃Thin Films by Multiple Cathode Sputtering H. Maiwa;N. Ichinose;K. Okazaki