유도 결합 플라즈마를 이용한 백금 박막의 건식 식각시 가스 첨가 효과

Effects of $O_2$ Gas Addition to Dry Etching of Platinum. Thin Film by Inductively Coupled Plasma

  • 김남훈 (중앙대 공대 전기공학과) ;
  • 김창일 (중앙대 공대 전자전기공학부) ;
  • 권광호 (한서대 공대 전자공학과) ;
  • 장의구 (중앙대 공대 전기공학과)
  • 발행 : 1999.06.01

초록

The highest etch rate of Pt film was obtained at 10% $Cl_2$/90% Ar gas mixing ratio in our previous investigation. However, the problems such as the etch residues(fence) remained on the pattern sidewall, low selectivity to oxide as mask and low etch slope were presented. In this paper, the etching by additive $O_2$ gas to 10% $Cl_2$/90% Ar gas base was examined. As a result, the fence-free pattern and higher etch slope as about 60$^{\circ}$was observed and the selectivity to oxide increased to 2.4 without decreasing of the etch rate $1500{\AA}$/min. XPS surface analysis proved that a only little $O_2$ gas removes the Pt-CI compounds as residues on the etched surface.

키워드

참고문헌

  1. Jpn. J. Appl. Phys. v.32 Platinum Etching and Plasma Characteristics in RF Magnetron and Electron Cyclotron Resonance Plasmas K. Nishikawa;Y. Kusumi;T. Oomori;M. Hanazaki;K. Namaba
  2. Jpn. J. Appl. Phys. v.35 Control of Etch Slope during Etching of Pt in Ar/Cl₂/O₂Plasmas Won Jong Yoo;Jin Hwan Hahm;Chan Ouk Jung;Young Bum Koh;Moon Yong Lee
  3. J. Vac. Sci. Technol. A v.16 no.5 The Etching Properties of Pt Thin Films by Inductively Coupled Plasma K. H. Kwon;C. I. Kim;S. J. Yun;G. Y. Yeom
  4. Proceeding of MRS 98 Spring Meeting v.514 Etching of Platinum Thin Films by Hign Density Ar/Cl₂/HBr Plasma C.-I. Kim;N.-H. Kim;E.-G. Chang;K.-H. Kwon;G.-Y. Yeom;Y.-J. Seo
  5. 제6회 반도체학술대회 논문집 백금 박막의 식각시 O₂가스 첨가에 의한 식각 잔류물 억제에 관한 연구 김남훈;김창일;권광호;장의구;이우선