강유전체$Ba_{1-x}Sr_xTiO_3$ 박막의 제조 및 상부전극재료에 따른 전기적 특성

Deposition $Ba_{1-x}Sr_xTiO_3$Thin Films and Electrical Properties with Various Materials Top Electrodes

  • Park, Choon-Bae (Dept.of Electronics Engineering, Wonkwang University) ;
  • Kim, Deok-Kyu (Dept. of Electronic Material Engineering Wonkwang University) ;
  • Jeon, Jang-Bae (Dept. of Electronic Material Engineering Wonkwang University)
  • 발행 : 1999.06.01

초록

$Ba_{1-x}Sr_xTiO_3$ thin films with various ratio of Sr (X = 0.4, 0.5, 0.6) were grown $Pt/TiN/SiO_2/Si$ subastrate by RF magnetron sputtering deposition. As, Ag, and Cu films were deposited on $Ba_{1-x}Sr_xTiO_3$ thin films as top electrodes by using a thermal evaporator. The electrical properties of $Ba_{1-x}Sr_xTiO_3$ thin films for various compositions were characterized and the physical properties at interface between $Ba_{1-x}Sr_xTiO_3$ thin films and top electrodes were evaluated in terms of the work function difference. At x =0.5, the degradation of capacitance is lower to the other compositions. As negative biasapplied, the specimen with Cu top electrode has board saturation region and low leakage current since work function of Cu is bigger than other electrodes.$ Ba_{0.5}Sr_{0.5}TiO_3$ thin films with Cu top electrode, the dielectric constant was measured to the value of 354 at 1 kHz and the leakage current was obtained to the value of $5.26\times10^{-6}A/cm2$ at the forward bias of 2 V.

키워드

참고문헌

  1. Jpn. J. Appl. Phys. v.34 Depositon and Electrical Characterization of Very Thin SrTiO₃Films for Ultra Scale Integrated Dynamic Random Access Memory Application C. S. Hwang(et al.)
  2. VLSI 96 A stack Capacitor Technology with (Ba,Sr)TiO₃Dielectrics and Pt Electrodes for 1Giga-bit Density DRAM S. O. Park(et al.)
  3. SSDM 91 Single-Target Sputtering Process for PZT Thin Films with Precise Composition Control K. Torii(et al.)
  4. Appl. Phys. Lett. v.66 Dierect Current Conduction Properties fo Sputtered Pt/ $(Ba_{0.7}Sr_{0.3})TiO_3$/Pt Thin Films Capaaitors W. Y. Hsu(et al.)
  5. ISAF 95 Process/Structure/Property Relations of Barium Strontium Titanate Thin Films Deposited by Multi-Ion-Beam Sputtering Technique C. J. Peng(et al.)
  6. IEDM 96 A Stacked Capacitor with an MOCVD - (Ba,Sr)TiO₃Film and a RuO₂/Ru Storage Node on a TiN-Caped Plug for 4 Gbit DRAMs and beyond H. Yamaguchi(et al.)
  7. Intergrated Ferroelectrics v.10 Characterization of $Ba_{0.5}Sr_{0.5}TiO_3$ Thin Film Capacitors Produced by Pulsed Laser Deposition Q. X. Jia(et al.)
  8. IEDM 92 ULSI DRAM Technology with $Ba_{0.7}Sr_{0.3}TiO_3$ Film of 1.3 nm Equivalent SiO_2$ Thickness and $10^{-9} A/cm^2$ Leakage Current E. Fujii(et al.)
  9. IEDM 91 A Stacked Capacitor with $(Ba_xSr_{1-x})TiO_3$ for 256M DRAM K. Koyama(et al.)
  10. ISIF 95 v.11 Electrical Properties of Barium Strontium Titanate (BST) Thin Films Deposited on Various Pt-Base Electrodes W. J. Lee(et al.)
  11. Jpn. J. Appl. Phys. v.32 Preparation and Propertise of (Ba,Sr)Tio₃Thin Films by RF Magnetron Sputtering N. Ichinose(et al.)
  12. Appl. Phys. Lett. v.64 High dielectric constant (Ba,Sr)TiO₃Thin Films Prepared on RuO₂/Sapphire K. Takemura(et al.)
  13. Jpn. J. Appl. Phys. v.33 Preparation of Pb(Zr,Ti)O₃Thin Films on Ir and IrO₂Electrodes T. Nakamura(et al.)
  14. Electrode Materials for Ferroelectric Thin Film Capacitors and Their effect on the Electrical Properties H. N. Al-Shareef;A. I. Kigon
  15. Jpn. J. Appl. Phys. v.33 Dielectrical Properties of $(Ba_xSr_{1-x})TiO_3$ Thin Films Prepared by RF Sputtering for Dynamic Random Access Memory Application T. Kuroiwa(et al.)
  16. Jpn. J. Appl. Phys. v.33 Epitaxial Growth and Dielectric Properties of $(Ba_{0.24}Sr_{0.76})TiO_3$ Thin Film K. Abe;S. Komatsu
  17. Jpn. J. Appl. Phys. v.36 Variation of Electrical Conduction Phenomena of Pt/(Ba,Sr)/Pt Capacitors by Different Top Electrode Formation Processes K. H. Lee(et al.)