The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Characteristics of Polycrystalline Silicon TFT Unitary CMOS Circuits Fabricated with Various Technology

다양한 공정 방법으로 제작된 다결정 실리콘 박막 트랜지스터 단위 CMOS 회로의 특성

  • Published : 1999.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

This paper reports the characteristics of poly-Si TFT unitary CMOS circuits fabricated with various techniques, in order to investigate the optimum process conditions. The active films were deposited by PECVD and LPCVD using $SiH_4\; and\; Si_2H_6$ as source gas, and annealed by SPC and ELA methods. The impurity doping of the oource and drain electrodes was performed by ion implantation and ion shower. In order to investigate the AC characteristics of the poly-Si TFTs processed with various methods, we have examined the current driving characteristics of the polt-Si TFT and the frequency characteristics of 23-stage CMOS ring oscillators. Ithas been observed that the circuits fabricated using $Si_2H_6$ with low-temperature process of ELA exhibit high switching speed and current driving performances, thus suitable for real application of large area electronics.

Keywords

References

  1. MRS Symp. On Comparison of TFT and SOI Technologies Amorphous silicon thin film transistors and application to large-area electronics C. Tuan
  2. Mat. Res. Soc. Symp. Proc. v.345 a-Si TFT Technology for AM-LCDs Ibaraki
  3. Japan Display 92 poly-Si TFT devices and their application to LCDs H. Firester;W. R. Roach;R. Stewart
  4. SID 92 Digest Fully Integrated Poly-Si TFT CMOS Drivers for Self-Scanned Light Valve Y. Nishida;S. Yamamoto;S. Yamada;T. Hikichi;I. Asai;T. Hamano
  5. SID 90 Digest Performance of Polysilicon TFT Digital Circuits Fabricated with Various Processing Techniques and Device Architectures I. Wei;A. G. Lewis;A. Chiang
  6. IEEE J. Solid-State Circuits v.27 Polysilicon TFT circuit design and performance G. Lewis;D. D. Lee;R. H. Bruce
  7. J. Appl. Phys. v.74 no.1 Solid Phase Crystallization of Thin Films of Si Prepared by Plasma-Enhanced Chemical Vapor Deposition Y, Masaki;P. G. LeComber;A. G. Fitzgerald
  8. J. Elec. Mat. v.19 no.3 Low Temperature Crystallization of Amorphous Silicon Using an Eximer Laser R. Z. Bachrach;K. Winer;J. B. Boyce;S. E. Ready;R. I. Johnson;G. B. Anderson
  9. Appl. Phys. Lett. v.66 no.21 N-channel Polycrystalline Silicon Thin Film Transistors Using As-deposited Polycrystalline Silicon and Ion Doping H. J. Lim;B. Y. Ryu;J. Jang
  10. Appl. Phys. Lett. v.64 no.17 Super Lateral Growth Phenomenon Observed in Excimer Laser-Induced Crystallization of Thin Si Films J. S. Im;H. J. Kim
  11. EMICON/KOREA 92 Technical Proceeding Ⅱ High Performance TFT by Excimer Laser Annealing after Solid Phase Crystallization T. Noguchi
  12. IEEE Trans. Electron Devices v.ED-30 Field effect in large grain polycrystalline silicon Colinge;H. Morel;J. P. Change