대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

온도를 고려한 GaAs $p^+n$접합의 해석적 항복 전압

Analytic breakdown voltage as a function of temperature for GaAs $p^+n$ junction

  • 정용성 (서라벌대학 전기전자전산계열)
  • 발행 : 1999.04.01
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초록

Temperature dependence of effective ionization coefficients in GaAs is formulated as a single polynomial function of temperature, which allows analytical expressions for breakdown voltage of GaAs $p^+n$ junctions as a function of temperature. At 300 K, extracted effective ionization coefficient of GaAs $p^+n$ junction especially agrees well with the published result of <111> oriented GaAs. The analytic results agree with the simulation as well as the experimental ones reported within 10% in error for the doping concentrations in the range of $10_{14}cm_{-3}~10_{17}cm_{-3}$ at 100 K, 300 K and 500 K.

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참고문헌

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