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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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An Improved Calculation Model for Analysis of [111] InGaAs/GaAs Strained Piezoelectric Superlattices

  • Received : 1999.08.12
  • Published : 1999.12.31
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Abstract

We present a calculation model for an improved quantitative theoretical analysis of electronic and optical properties of strained-piezoelectric[111] InGaAs/GaAs superlattices (SLs). The model includes a full band-coupling between the four important energy bands: conduction, heavy, light, and spin split-off valence bands. The interactions between these and higher lying bands are treated by the k ${\cdot}$ p perturbation method. The model takes into account the differences in the band and strain parameters of constituent materials of the heterostructures by transforming it into an SL potential in the larger band-gap material region. It self-consistently solves an $8{\times}8$ effective-mass $Schr{\ddot{o}}dinger$ equation and the Hartree and exchange-correlation potential equations through the variational procedure proposed recently by the present first author and applied to calculate optical matrix elements and spontaneous emission rates. The model can be used to further elucidate the recent theoretical results and experimental observations of interesting properties of this type of quantum well and SL structures, including screening of piezoelectric field and its resultant optical nonlinearities for use in optoelectronic devices.

Keywords

References

  1. Solid State Comm. v.57 Strain-Generated Electric Fields in [111] Growth Axis Strained-Layer Superlattices Smith, D.L.
  2. J. Appl. Phys. v.53 Strained-Layer Superlattics from Lattice Mismatched Materials Osbourn, G.C.
  3. Appl. Phys. Lett. v.56 Strain-Induced Two-Dimensional Electron Gas in [111] Growth-Axis Strained-Layer Structures Snow, E.S.;Shanabrook, B.V.;Gammon, D.
  4. Review of Modern Physics v.62 Theory of Semiconductor Superlattice Electronic Structure Smith, D.L.;Mailhiot, C.
  5. Appl. Phys. Lett. v.60 Anan, T.;Nishii, K.;Sugou, S.
  6. Semicond. Sci. Technol. v.8 Line Broadening due to Carrier-Carrier Scattering in Quantum Well Heterostructures Hamilton, R.A.H.;Rees, P.
  7. Appl. Phys. Lett. v.63 Determining the Electric Field in [111] Strained-Layer Quantum Wells Tober, R.L.;Bahder, T.H.
  8. Appl. Phys. Lett. v.65 Dependence on the In Concentration of the Piezoelectric Field in [111]B InGaAs/GaAs Strained Heterostructures Sanchez-Rojas, J.L.;Sacedon, A.;Gonzalez-Sanz, F.;Calleja, E.;Munoz, E.
  9. Appl. Phys. Lett. v.65 Comparison of Optical Nonlinearities in Piezoelectric Strained [111]-and [001]-Grown (In,Ga)As/(Al,Ga)As Quantum Wells Livingstone, M.;Galbraith, I.;Wherrett, B.S.
  10. IEEE Photonics Technology Letters v.7 Electronic Structure and Field Screening Effects in 111 InGaAs-GaAs Strained Layer Piezoelectric Quantum-Wells Rodriguez-Girones, P.J.;Rees, G.J.
  11. Appl. Phys. Lett. v.67 Piezoelectric Field Effects in InGaAs [111]B Quantum Wells Chen, X.;Molloy, C.H.;Woolf, D.A.;Cooper, C.;Somerford, D.J.;Blood, P.;Shore, K.A.;Sarma, J.
  12. Microelectronics Journal v.27 AlGaAs/GaAs and InGaAs/GaAs QWs Grown on GaAs [111]A Substrates Toshihide Watanabe;Teiji Yamamoto;Vaccaro, Pablo O.;Hajime Ohnishi;Kazuhisa Fujita
  13. Phys. Rev. B v.53 Generalization of the k.p Approach for Strained Semiconductor Structures Grown on High-Index-Planes Los, J.;Fasolino, A.;Catellani, A.
  14. J. Appl. Phys. v.81 Equilibrium Critical Thickness of Epitaxial Strained Layers in the {111} Orientations Colson, H.G.;Dunstan, D.J.
  15. Phys. Rev. B v.55 Electric Fields and Valence-Band Offsets at Strained [111] Heterostructures Picozzi, S.;Continenza, A.;Freeman, A.J.
  16. Phys. Rev. B v.56 Excitonic Properties in [111]B-Grown (In,Ga)As/GaAs Piezoelectric Multiple Quantum Wells Ballet, P.;Disseix, P.;Leymarie, J.;Vasson, A.;Vasson, A.M.;Grey, R.
  17. J. Appl. Phys. v.84 Barrier Thickness Dependence of the Photoscreening of the Piezoelectric Field in [111] Oriented GaAs-InxGal-xAs Double Quantum Wells Moran, M.;Moore, K.J.;Dawson, P.
  18. J. Appl. Phys. v.85 Effects of the Piezoelectric Field on Quantum-Confined Stark Effect in [111]B InGaAs Quantum-Well Structure Bruno, John D.;Tober, Richard L.
  19. Phys. Rev. B v.59 Exciton Intensity Dependence of PL from Narrow [100]- and [111]A-Grown InxGal-xAs/GaAs QWs Sauncy, T.;Holtz, M.;Brafman, O.;Fekete, D.;Finkelstein, Y.
  20. Appl. Phys. Lett. v.56 Caridi, E.A.;Chang, T.Y.;Goossen, K.W.;Eastman, L.F.
  21. Appl. Phys. Lett. v.56 Observation of Room-Temperature Blue Shift and Bistability in a Strained InGaAs-GaAs<111>Self-electro-optic Effect Device Goossen, K.W.;Caridi, E.A.;Chang, T.Y.;Stark, J.B.;Miller, D.A.B.;Morgan, R.A.
  22. Appl. Phys. Lett. v.63 Tailoring of Internal Fields in InGaAs/GaAs Multiwell Structures Grown on [111]B GaAs Pabla, A.S.;Sanchez-Rojas, J.L.;Woodhead, J.;Grey, R.;David, J.P.R.;Rees, G.J.;Hill, G.;Pate, M.A.;Robson, P.N.;Hogg, R.A.;Fisher, T.A.;Willcox, A.R.K.;Whittaker, D.M.;Skolnick, M.S.;Mowbray, D.J.
  23. Appl. Phys. Lett. v.67 Novel InGaAs/GaAs Quantum Dot Structues Formed in Tetrahedral-Shaped Pecesses on [111]B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy Yoshihiro Sugiyama;Yoshiki Sakuma;Shunichi Muto;Naoki Yokoyama
  24. Appl. Phys. Lett. v.68 Partial Screening of Internal Electric Fields in Strained Piezoelectric Quantum Well Lasers:Implications for Optoelectronic Integration Pabla, A.S.;Woodhead, J.;Khoo, E.A.;Grey, R.;David, J.P.R.;Rces, G.J.
  25. Appl. Phys. Lett. v.68 High Optical Quality of Strained [111]B $In_{0.12}Ga_{0.88}As/Al_{0.2}Ga_{0.8}As$ Multiple Quantum Wells Chin, Albert;Lin, B.C.
  26. Appl. Phys. Lett. v.69 Observation of Compositional Modulation in [111]A InGaAs Quantum Wells and the Effect on Optical Properties Chin, Albert;Chen, W.J.
  27. Appl. Phys. Lett. v.69 Laser Diodes in Piezoelectric Quantum-Well Structues Cooper, Craig;Westwood, David I.;Blood, Peter
  28. Phys. Rev. B v.53 Sanchez-Rojas, J.L.;Sacedon, A.;Calleja, E.;Munoz, E.;Sanz-Hervas, A.;Benito, G.D.;Lopez, M.
  29. Appl. Phys. Lett. v.71 Optical Property of a Novel [111]-Oriented Quantum Structure Xiong Zhang;Chua, Soo-Jin;Shijie Xu;Chong, Kok-Boon;Kentaro Onabe
  30. J. Appl. Phys. v.82 Growth and Fabrication of Strained-Layer InGaAs/GaAs Quantum Well Lasers Grown on GaAs(311)A Substrates Using only a Silicon Dopant Mitsuo Takahashi;Manabu Hirai;Kazuhisa Fujita;Norifumi Egami;Kenichi Iga
  31. Appl. Phys. Lett. v.72 Characterization of Piezoelectric [111]B InGAAs/GaAs p-i-n Quantum Well Structures Using Photoreflectance Spectroscopy Chan, C.H.;Chen, M.C.;Lin, H.H.;Chen, Y.F.;Jan, G.J.;Chen, Y.H.
  32. J. Appl. Phys. v.84 Photoreflectance Spectroscopy of Strained-Layer [111]B InGaAs/GaAs Quantum Well Diodes Chan, C.H.;Chen, Y.F.;Chen, M.C.;Lin, H.H.;Jan, G.J.
  33. J. Appl. Phys. v.84 InGaAs/GaAs Quantum Dots on [111]B GaAs Substrates Tsai, F.Y.;Lee, C.P.
  34. Journal of Lightwave Technology v.LT-4 Reduction of Lasing Threshold Curren Density by the Lowering of Valence Band Effective Mass Yablonovitch, E.;Kane, E.O.
  35. Phys. Rev. Lett. v.60 Enhancement in Optical Transition in [111]-Oriente GaAs-AlGaAs Quantum Well Structures Hayakawa, T.;Takahashi, K.;Kondo, M.;Suyama, T.;Yamamoto, S.;Hijikata, T.
  36. Appl. Phys. Lett. v.52 Near-Ideal Threshold Behavior in [111] Oriented GaAs/AlGaAs Quantum Well Lasers Hayakawa, T.;Suyama, T.;Takahashi, K.;Kondo, M.;Yamamoto, S.;Hijikata, T.
  37. Numerical Data and Functional Relationships in Science and Technology, Group Ⅲ, Vol. 17 Landolt-Bornstein;Madelung, O.(ed.)
  38. Phys. Rev. B v.58 Kim, B.W.
  39. J. Phys. Chem. Solids v.1 Band Structure of Indium Antimonide Kane, Evan O.
  40. Phys. Rev. B v.41 Eight-Band k.p Model of Strained Zinc-Blende Crystals Bahder, Thomas B.
  41. Superlattices and Microstrutures v.13 Band Gap Renomalization in Semiconductor Quantum Wells Ryan, J.C.;Reinecke, T.L.
  42. Superlattices and Microstructures v.7 Band Gap Renormalization at Finite Carrier Densities in Semiconductor Quantum Wells and Mesa Structures Reinecke, T.L.;Broido, D.A.;Lach, E.;Kulakovskii, V.;Forchel, A.;Gruetzmacher, D.
  43. J. Phys. C: Solid State v.4 Hedin, L.;Lundqvist, B.I.
  44. Phys. Rev. B v.25 Vashishta, P.;Kalia, P.K.
  45. Solid State Physics v.32 Rice, T.M.;Seitz, F.(ed.);Turnbull, D.(ed.);Ehrenreich, H.(ed.)
  46. J. Appl. Phys. v.77 Electronic and Intersubband Optical Properties of p-type GaAs/AlGaAs Superlattices for Infrared Photodetectors Kim, B.W.;Mjerfeld, A.
  47. Quantum Phenomena Datta, S.K.
  48. Semiconductors v.22 Numerical Data and Functional Relationships in Science and Technology, Group Ⅲ: Crystal and Solid State Physics Madelung, O.(ed.)