Journal of Sensor Science and Technology (센서학회지)
- Volume 8 Issue 3
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- Pages.265-273
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- 1999
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- 1225-5475(pISSN)
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- 2093-7563(eISSN)
Reduction of the residual stress of various oxide films for MEMS structure fabrication
MEMS 공정을 위한 여러 종류의 산화막의 잔류응력 제거 공정
- Yi, Sang-Woo (School of Electrical Eng., Seoul National University) ;
- Kim, Sung-Un (School of Electrical Eng., Seoul National University) ;
- Lee, Sang-Woo (School of Electrical Eng., Seoul National University) ;
- Kim, Jong-Pal (School of Electrical Eng., Seoul National University) ;
- Park, Sang-Jun (School of Electrical Eng., Seoul National University) ;
- Lee, Sang-Chul (School of Electrical Eng., Seoul National University) ;
- Cho, Dong-Il (School of Electrical Eng., Seoul National University)
- 이상우 (서울대학교 전기공학부) ;
- 김성운 (서울대학교 전기공학부) ;
- 이상우 (서울대학교 전기공학부) ;
- 김종팔 (서울대학교 전기공학부) ;
- 박상준 (서울대학교 전기공학부) ;
- 이상철 (서울대학교 전기공학부) ;
- 조동일 (서울대학교 전기공학부)
- Published : 1999.05.31
Abstract
Various oxide films are commonly used as a sacrificial layer or etch mask in the fabrication of microelectromechanical systems (MEMS). Large residual strain of these oxide films causes the wafer to bow, which can have detrimental effects on photolithography and other ensuing processes. This paper investigates the residual strain of tetraethoxysilane (TEOS), low temperature oxide (LTO), 7 wt% and 10 wt% phosphosilicate glass (PSG). Euler beams and a bent-beam strain sensor are used to measure the residual strain. A poly silicon layer is used as the sacrificial layer, which is selectively etched away by
본 논문에서는 MEMS 공정에 많이 사용되는 tetraethoxysilane (TEOS) 산화막, low temperature oxide (LTO), 7 wt%, 10 wt% phosphosilicate glass (PSG)의 잔류응력을 Euler beam과 bent-beam strain sensor를 제작하여 측정하였다. 이러한 산화막 잔류응력 측정 구조물을 만들기 위해 다결정실리콘을 희생층으로 사용하였으며
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