GaAs/Ge Tandem Solar Cell에 관한 터널 다이오드 최적화 연구

Optimization of the tunnel Diode for GaAs/Ge Tandem Solar Cell

In two terminals monolithic tandem solar cells, tunnel diode is an important variable to improve conversion efficiency depending on current matching between the top and the bottom cells. Especially, the GaAs/Ge tandem is one of the most interesting cells for its high potential efficiency. This paper shows that physical analysis about I-V specific character of the GaAs/Ge solar cell, which is grown by MOCVD for GaAs or CVD for Ge, using computer simulation and experimental results, varying with thickness of the tunnel diode layer and concentration.