광통신용 LD제작

  • 추안구 (삼성종합기술원 광전자 Lab.)
  • Published : 1998.06.01

Abstract

Keywords

References

  1. '98 OFC workshop Low-cost WDM: The future of the fiberoptic LAN Brian Lemoff
  2. IEEE Photon. Technol. Lett. v.10 no.4 1.3 mm continuous wave lasing operation in GaInNAs quantum well lasers K. Nakahara;M. Kondow;T. Kitatani;M. C. Larson;Uomi
  3. IEEE Photon. Technol. Lett. v.30 no.2 High-performance uncooled 1.3 mm AlGaInAs/InP strained-layer quantum-well lasers for subscriber loop applications C. Zah;R. bhat;B. Pathak;F. Favire;W. Lin;M. C. Wang;N. C. Andreadakis;D. M. Hwang;T. Lee;Z. Wang;D. Darby;D. Flanders;J. Hsieh
  4. Growth of 1.3 mm InAsP/InGaAsP laser structure by gas source molecular beam epitaxy v.67 no.25 P. Thiagarajan;A. Bernussi;H. Temkin;G. Robinson
  5. Effect of mesa shape on the planarity of InP regrowths performed by atmospheric pressure and low pressure selective metalorganic vapor phase epitaxy v.109 J. Zilko;B. Segner;U. Chakrabarti;R. Logan;J. Lopata;D. Van Haren;J. Long;V. McCeary
  6. analysis of leakage currents in 1.3 mm InGaAsP real index guided lasers v.2 no.3 N. Dutta;D. Wilt;R. Nelson
  7. '97 2nd OECC, 10C1-1 spot-siaze converter integrated laser diodes Y. Itaya;Y. Tohmori;M. Wada;H. Fukano
  8. Phys. Rev. v.125 no.1 double injection in insulator M. Lampert