Journal of Korean Vacuum Science & Technology
- Volume 2 Issue 2
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- Pages.107-117
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- 1998
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- 1226-6167(pISSN)
Epitaxy of Si and Si1-xGex(001) by ultrahigh vacuum ion-beam sputter deposition
- Lee, N. E. (School of Metallurgical and Materials Engineering Sungkyunkwan University, 300 Chunchun-dong, Suwon, Kyunggi 440-746) ;
- Greene, J. E. (Materials Science Department, the Coordinated Science Laboratory, and the Materials Research Laboratory University of Illinois, 1101 W. Springfield Ave, urbana, IL 61801, USA)
- Published : 1998.10.01
Abstract
Epitaxial undoped and Sb-doped si films have been grown on Si(001) substrates at temperatures T between 80 and 750
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