Journal of Korean Vacuum Science & Technology
- Volume 2 Issue 1
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- Pages.32-36
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- 1998
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- 1226-6167(pISSN)
High energy ion implantation system with tandem accelerator
- Kim, Y. S. (Korea Institute of Geology, Mining and Materials, Taejon 305-350) ;
- Woo, H. J. (Dept. of Metallurgical Engineering, Hanyang University (Received may 15, 1997)) ;
- Choi, H. W. (Dept. of Metallurgical Engineering, Hanyang University (Received may 15, 1997)) ;
- Kim, G. D. (Dept. of Metallurgical Engineering, Hanyang University (Received may 15, 1997)) ;
- Kim, J. K. (Dept. of Metallurgical Engineering, Hanyang University (Received may 15, 1997)) ;
- Shin, H. K. (Samsung electronics Co., LTD, Suwon 449-900, Korea (Reveived Jul 7, 1997))
- Published : 1998.04.01
Abstract
A MeV ion implantation system with an 1.7 MV tandem Van de Graaff accelerator has been in the Korea Institute of Geology Mining and Materials. Almost all ions from hydrogen to uranium with several MeV can be implanted. The implantation system consists of a raster beam scanner with scanning frequency 64
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