A Study on Deposition of Tungsten Nitride Thin Film for X-ray mask(l)

X-ray 마스크용 $WN_x$ 박막 증착에 관한 연구(l)

  • Jang, Cheol-Min (School of Materials and Metallurgical Engineering, Kum-oh National University of Technology) ;
  • Choi, Byung-Ho (School of Materials and Metallurgical Engineering, Kum-oh National University of Technology)
  • 장철민 (금오공과대학교 재료.금속공학부) ;
  • 최병호 (금오공과대학교 재료.금속공학부)
  • Published : 1998.02.01

Abstract

Tungsten nitride is very attractive as absorber for X-ray lithographic mask and as a diffusion barrier for interconnecting metallization in Si VLSI technology. Microstructure of tungsten nitride films prepared by RF magnetron sputtering has been investigated as a function of deposition parameter. The crystal structure of sputtered films on silicon nitride membrane depends strongly on the NJAr gas flow ratio(0~18%1, gas pressure(l0~43mTorr). RF power (60~150W), target-substrate distance(4~8cm). Tungsten nitride films deposited at the $N_2/Ar$ gas flow ratio(- 10%). gas pressure(~10mmTorr), RF power(~150W) and target-substrate distance(6cm) are amorphous, but at other conditions are almost rough -surfaced polycrystalline. Amorphous films are very smooth($3.1\AA$ rms) and expected to be excellent absorber for X-ray mask.

$WN_x$ 는 리소그라피 마스크의 흡수체나 VLSI 기술에서 금속연결의 확산방지재로써 주목을 받고 있다. RF마르네트론 스퍼터링법으로 여러 증착변수에서 제조한 $WN_x$ 막을 고찰하였다. $SiN_x$ 멤브레인 위에 증착된 박막의 결정구조는 질소아르곤 가스유량비(0-30%), 가스압력(10-43mTorr), RF출력(0150W)및 기판과 타겟사이의 거리 6cm에서 증착한 $WN_x$ 박막은 비정질이였으며 다른 조건에서는 표면이 거친 다결정질이었다. 비정질 박막은 rms가 $3.1\AA$으로 아주 매끈하여 X-선 마스크용 흡착제로써 적합할 것으로 기대된다.

Keywords

References

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