Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Preparation of Paraelectric PLT Thin Films Using Reactive Magnetron Sputtering of Multicomponent Metal Target

  • Kim, H.H. (Department of Electrical and Computer Engineering, New Jersey Institute of Technology) ;
  • Sohn, K.S.Casas, L.M.Pfeffer, R.L.Lareau, R.T. (Department of Electrical and Computer Engineering, New Jersey Institute of TechnologyArmy Research LaboratoryArmy Research LaboratoryArmy Research Laboratory)
  • Published : 1998.10.01
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Abstract

Paraelectric lead landthanum titanate(PLT) thin films have been prepared by a reactive dc magnetron sputtering system using a multicomponent metal target. The surface area control of each element on the target markedly facilitates the fabrication of thin films of complex ceramic compounds. A postdeposition heat-treatment was applied to all as-deposited PLT thin films at annealing temperatures up to 75$0^{\circ}C$ for crystalization. The composition of the PLT(28) thin filmannealed at $650^{\circ}C$ was: Pb, 0.73; La, 0.28; Ti, 0.88; O, 2.9. The dielectric constant and dissipation factor of the thin film(200 nm) at low filed measurements (500 Vcm-1) are 1216 and 0.018, respectively. The charge storage density using a typical Sawyer-Tower circuit with a 500 Hz sine wave was 12.5 $\mu$Ccm-2 at the electric field of 200 kVcm-1.

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