Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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PURE THIN FILMS FROM Ba/Ti ALKOXIDES

  • K. Musabekov (Dept. of Chemistry, Kazak State University) ;
  • N. Korobova (Dept. of Automatic and Radioelectronic Tech, Almaty Technique Institute) ;
  • Wha, Soh-Dea (Dept. of Electronic Engineering, Myong-Ji Unviersity)
  • Published : 1998.11.01
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Abstract

Barium titanate owes its great importance to the fact that its dielectric constant is about 100 times higher than that of conventional dielectric materials provided its compositional and structural purity is extremely high. The value of crystalline BaTiO3 bodies as used, for instance, in computer elements, magnetic amplifiers, memory device, ets., depend on boththe compositional and the structural purity of the BaTiO3 crystals. This purity will, in turn, depend on the purity of the raw materials used in manufacturing the BaTiO3 compound and on the particularmethods of manufacture which determine the size, homogeneity, and the structural purity of the crystals. This paper reviews the important theoretical considerations, processing techniques and applications related to sol-gel derived thin films.

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