한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제11권10호
  • /
  • Pages.815-819
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  • 1998
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

결정의존성 식각/기판접합을 이용한 MEMS용 구조물의 제작

Si Micromachining for MEMS-IR Sensor Application

  • 박홍우 (한국과학기술연구원 정보재료소자연구센터) ;
  • 주병권 (한국과학기술연구원 정보재료소자연구센터) ;
  • 박윤권 (서울시립대학교 전자공학) ;
  • 박정호 (고려대학교 전자공학) ;
  • 김철주 (서울시립대학교 전자공학) ;
  • 염상섭 (한국과학기술연구원 정보재료소자연구센터) ;
  • 서상회 (한국과학기술연구원 정보재료소자연구센터) ;
  • 오명환 (한국과학기술연구원 정보재료소자연구센터)
  • 발행 : 1998.10.01
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초록

The silicon-nirtide membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PRO($PbTiO_3$ ) layer for a IR detection was coated on the membrane and its characteristics were measured. The a attack of PTO layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer were eliminated through the method of bonding/etching of silicon wafer. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by the PTO layer were measured, too.

키워드

참고문헌

  1. Infrared Technology Fundamental(2nd Edition) M. Schlessinger
  2. J. of Applied Physics v.80 no.12 The investigation of semiconducting YBaCuO thin films P. C. Shan;Z. Celik-Butler;D. P. Butler
  3. SPIE v.2020 uncooled thermal imageing wuith monolithic silicon focal plane R. A. Wood
  4. J. Vac. Sci. Technol. v.B6 no.6 Surface micromachining for microsensors and microactuators R. T. Howe
  5. Japanese Journal of Applied Physics v.32 Study of Si etching rate in various composition of SCI solution H. Kobayashi(et al.)
  6. IEEE J. of MEMS v.2 no.2 Design of sealed cavity microstructures formed by Silicon Wafer Bonding M. A. Huff;A. D. Nikolich