한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제11권7호
  • /
  • Pages.527-534
  • /
  • 1998
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

고주파 반응성 스퍼터링에 의해 제작된 InN 박막의 특성

Characteristics of InN thin fabricated by RF reactive sputtering

  • 김영호 (반도체제조방비국산화연구센터(호서대학교)) ;
  • 최영복 (광운대학교 전자재료공학과) ;
  • 정성훈 (광운대학교 전자재료공학과) ;
  • 홍필영 (광운대학교 전자재료공학과) ;
  • 문동찬 (광운대학교 전자재료공학과) ;
  • 김선태 (대전산업대학교 재료공학과)
  • 발행 : 1998.07.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Thin film deposition of InN, which is a less-studied III-nitride compound semiconductor because of the difficulty if crystal growth, was performed by rf reactive sputtering method using In target and $N_2$reactive gas. The structrual, electrical, and optical properties of the produced films were measured and disussed according to the sputtering parameters such as deposition pressure, rf power, and substrate temperature. From the result of deposition pressure, rf power, and substrate temperature, we could obtain optimal conditions of 5m Torr, 60W, $60^{\circ}C$ for preparing InN thin film with high crystallinity, low carrier concentration, and high Hall mobility. The carrier concentration, Hall mobility, and optical bandgap of the fabricated InN thin films at optimal condition were $6.242\times10^{18}cm^{-3}, 212.526cm^2/V\cdot$ｓ, and 1.912eV, respectively.

키워드

참고문헌

  1. J. Crystal Growth no.128 Growth of GaN and AlGaN for UV blue p-n junction diodes Akasaki, I.;Amano, H.;Murakami, H.;Sassa, M.;Manabe, K.
  2. J. Appl. Phys. v.7 no.11 In situmonitoring and hall measurements of GaN grown with GaN butter layers Nakamura, S.;Mukai, T.;Senoh, M.
  3. J. Crystal Growth no.98 Effects of AIN buffer layer and on electrical and optical properties of GaN and $Al_{1-x}Ga_xN$ (0
  4. Mater. Res. Bull. no.5 Thermal stability of indium nitride at elevated temperatures and nitrogen pressures MacChesney, J. B.;Bridenbaugh, P. M.;O'Connor, P. B.
  5. J. Phys. Chem. solids v.56 no.3-4 Ⅲ-ⅤNitrides : Thermodynamics and Crystal Growth at high N-2 pressure Grzegory, I.;Jun, J.;Bockowski, M.
  6. Properties of group Ⅲ-Nitrides, edited by James H. Edgar INSPEC
  7. Thin Solid Films no.69 Mechanisms of reactive sputtering of indium 1 : growth of InN in Mixed Ar-N2 discharges Natarajan, B. R.;Eltoukhy, A. H.;Greene, J. E.;Barar, R. L.
  8. J. Crystal Growth no.146 Influence of growth rates on properties on InN thin films Yuichi Sato;Susumu Sato
  9. Mat. Res. Soc. Symp. Proc. no.339 Buffer layer thickness and the properties of InN thin fiilms on AIN-seeded (00ㆍ1) sapphire and (111) silicon Kistenmacher, T. J.;Ecelberger, S. A.;Bryden, W. A.
  10. J. Crystal Growth v.144 Growth of InN thin films by hydride vapor phase epitasy Yuichi Sato;Susumu Sato
  11. Appl. Phys. Lett. v.66 no.6 Growth of InN films on GgAs(111) and GaP(111) substrates by microwave exicited metalorganic vapor phase epitaxy Qixin Guo;Hiroshi Ogawa
  12. J. Crystal Growth no.127 Structural properties of InN films grown on GaAs substrates : observation of the zincblende polytype Strite, S.;Chandrasekhar, D.;David, J. Smith
  13. Electron Lett. no.120 Electron mobility in indium nitride Tansley, T. L.;Foley, C. P.
  14. Appl. Surf. Scien. v.22/23 Morphology and Structure of indium nitride films Foley, C. P.;Tansley, T. L.
  15. OPTICS Moller, K. D.
  16. J. Appl. Phys. v.59 no.9 Optical bandgap of indium nitride Tansley, T. L.;Foley, C. P.
  17. J. Appl. Phys. v.60 no.5 Infrared absorptiion in indium nitride Tansley, T. L.;Foley, C. P.