한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제11권5호
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  • Pages.365-370
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  • 1998
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

ECR 플라즈마와 습식 식각으로 게이트 리세스한 AlGaAs/InGaAs/GaAs PHEMT 소자의 전기적 특성연구

A Study of Electrical Properties for AlGaAs/InGaAs/GaAs PHEMT s Recessed by ECR Plasma and Wet Etching

  • 발행 : 1998.05.01
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초록

We studied a electrical properties in GaAs/AlGaAs/InGaAs pseudomorphic high electron mobility transistors(PHEMT s) recessed by electron cyclotron resonance(ECR) plasma and wet etching. Using the $NH_4OH$ solution, a nonvolatile AlF$_3$layer formed on AlGaAs surface after selective gate recess is effectively eliminated. Also, we controlled threshold voltage($V_th$) using $H_3PO_4$ etchant. We have fabricated a device with 540 mS/mm maximum transconductance and -0.2 V threshold voltage by using $NH_4OH$ and $H_3PO_4$dip after ECR gate recessing. In a 2-finger GaAs PHEMT with a gate length of 0.2$\mu m$ and width of 100 $\mu m$, a current gain of 15 dB at 10 GHz and a maximum cutoff frequency of 58.9 GHz have been obtained from the measurement of current gain as a function of frequency at 12mA $I_{dss}$ and 2 V souce-drain voltage.

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참고문헌

  1. IEEE Trans. Electron Devices no.40 Noise in AlGaAs/InGaAs/GaAs Pseudomorphic HEMTs from 10 Hz to 18 GHz Plana, R.;Escotte, L.;Llopis, H.;Amine, H.;Parra, T.;Gayral, M.;Graffeuil, J.
  2. IEEE Trans. Electron Devices no.39 0.25㎛ Pseudomorphic HEMTs Processed with Damage-Free Dry-Etch Gate-Recess Technology Ren, F.;Pearton, S. J.;Abernathy, C. R.;Wu, C. S.;Hu, M.;Pao, C. K.;Wang, D. C.
  3. Jpn J. Appl. Phys. v.16 Microwave Plasma Etching K. Suzuki;S. Okudaira;N. Sakudo;I. Kanomaka
  4. Appl. Phys. Lett. no.50 Low-energy ion extended with small dispersion from an electron cycrotron resonance microwave plasma stream Matsuoka, M.;Ono, K.
  5. Appl. Phys. Lett. no.45 Plasma etching in magnetic multipole microwave discharge Arnal, Y.;Pelletier, J.;Pomot, C.;Petti, B.;Durandet, A.
  6. J. Vac. Sci. Technol. no.A7 Electron cyclotron resonance microwave discharges for etching and thin-film deposition Asmussen, J.
  7. J. Electrochem. Soc. no.142 Reactive Ion Etching oc GaInP, GaAs, and AlGaAs Wu, J. W.;Chang, C. Y.;Chang, E. Y.;Chang, S. H.;Lin, K. C.
  8. J. Appl. Phys. no.61 An analytical study of etch and etch-stop reactions for GaAs on AlGaAs in CCl₂F₂ plasma Seaward, K. L.;Moll, N. J.;Coulman, D. J.
  9. J. Vac. Sci. Technol. v.B11 Selective reactive ion etching in SiCl₄/SiF₄ plasma for gate recess in GaAs/AlGaAs modulation-doped field effect transistors D. G. Ballegeer;S. Agarwala;M. Tong;K. Nummila;A. A. Ketterson;I. Adesida;J. Griffin;M. Spencer
  10. IEEE Trans. Electron Devices v.35 no.7 Pulse-Doped AlGaAs/InGaAs Pseudomorphic MODFET's Moll, N.;Hueschen, M. R.;Colbrie, A. F.
  11. Appl. Phys. Lett. v.60 no.13 The tunneling current in $In_{0.53}Ga_{0.47}$As junction field-effect transistors D. C. W. Lo;Y. K. Chung;S. R. Forrest