참고문헌
- Electroceramics Ⅴ Recent Trends in Electroceramic Thin Films : I. Capacitor, Pyroelectric Sensors and Piezoelectric Devices R. Waser;J. L.Baptista(ed.);J. A.Labrincha(ed.);P. M.Vilarinho(ed.)
- Electroceramics Ⅴ Recent Trends in Electroceramic Thin Films : Ⅱ. DRAMs, Nonvolatile Memories and Optical Devices A.I.Kingon;S.K.Streiffer;J. L.Baptista(ed.);J. A.Labrincha(ed.);P. M.Vilarinho(ed.)
- Proc. 4th International Symp. on Inergrated Ferroelectrics v.9-11 Feasibility for Memory Devices and Electrical Characterization of Newly Developed Fatigue Free Capacitors T. Mihara;H. Watanabe;C. A. Paz de Araujo;J. Cachiaro
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Integ. Ferroelectrics
v.12
no.2-4
Laser Ablation Preparation and Property of Bismuth-Layer-Structured
$SrBi_2Ta_2O_9$ and$Bi_4Ti_3O_12$ Ferroelectric Thin Films M. Okuyama;W. B. Wu;Y. Oishi;Y. Hamakawa -
Jpn. J. Appl. Phys.
v.33
no.9B
Ferroelectric Properties and Fatigue Characteristics of
$Bi_4Ti_3O_12$ Thin Film by Sol-Gel Processing M. Toyoda;Y. Hamaji;K. Tomono;D. A. Payne -
Phys. Rev.
v.122
no.3
Ferroeletricity in
$Bi_4Ti_3O_12$ and Its Solids Solutions E. C. Subbarao - J. Am. Ceram. Soc. v.45 no.4 Crystal Ch emistry of Mixed Bismuth Oxides with Layer-Type-Structure E. C. Subbarao
- Arkiv. Kemi. v.1 no.58 Mixed Bismuth Oxides with Layer Lattices B. Aurivillius
- Jpn. J. Appl. Phys. v.35 no.9B Grain-Oriented Ceramics in Bismuth Layer-Structure Compounds for Capacitor Material K. Shoji;Y. Uehara;K. Sakata
- Jpn. J. Appl. Phys. v.13 no.10 Piezoelectricity in Ceramics of Ferroelectric Bismuth Compound with Layer Structure S. Ikegami;I. Ueda
- Numercrical Data and Functional Relationships in Science and Technology v.16 Landolt-B mstein;K. H. Hellwege(Ed.)
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Ceram. Trans.
v.25
Synthesis and Characterization of
$Bi_4Ti_3O_12$ E. Dayalan;C. H. Peng;S. B. Desu -
Mat. Lett.
v.18
Synthesis and Characterization of an Acctate-alkoxide Precursor for Sol-Gel Derived
$Bi_4Ti_3O_12$ M.T oyoda;D A Payne -
Jpn. J. Appl. Phys.
v.32
Sysnthesis and Characterization of
$Bi_4Ti_3O_21$ thin Films by Sol-Gel Processing M.Toyoda;Y.Hamaji;K.Tomono;D. A.Payne -
Am. Ceram. Soc. Bull.
v.66
no.4
Phase Pelations and Dielectric Properties of Ceramics in the System
$Pb(Zn{1}/{3}Nb{2}/{3})O_3-SiTiO_3-PbiO_3$ J. R. Belsick;A. Halliyal;U. Kumar;R.E. Newnham -
요업학회지
v.34
no.8
졸겔공정을 이용한
$Bi_{4-x}Sm_xTi_3O_12(0\lex\le2)$ 박막 제조 및 특성평가 이창민;고태경 - J. Am. Ceram. Soc. v.67 no.5 Dielectric Properties of Lead Magnesium Niobate Ceramics L. Swartz;T R.Shrout;W. A.Schulze;L. E.Cross
- J. Mat. Res. v.10 no.4 Role of Excess PbO on the Microstructure and Dielectric Properties of Lead Magnesium Niobate S. M. Gupta;A. R. Kulkarni
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Compt. rend.
v.252
no.5
Ferroelectric Properties of Mixed Titanates of the System
$Bi_4Ti_3O_12{\cdot}nBaTiO_3$ P. Fang;C. Robbins;F. Forrat - Int. Ferroelectrics v.15 Dielectric Analysis of Integrated Ceramic Thin Film Capacitors R. Waser
- J. Appl. Phys. v.80 no.4 Structural and Electrical Characteristics of Rapid Thermally Provessid Ferroelectric Bi4TieO12 Thin Films Prepared by Matalorganic Solution Deposition Technique P.C.Joshi;S.B.Desu
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J. Appl. Phys.
v.72
no.12
Structural and Electrical Studies on Rapid Thermally Processed Ferroelectronic
$Bi_4Ti_3O_12$ Thin Films by Metallo-organic Solution Deposition P. C.Joshi;S. B.Krupanidhi -
Jpn. J. Phys.
v.34
no.9B
Charcateristic of Bismuth Layered
$SrBi_2Ta_2O_9$ Thin Film Capacitors and Comparison with Pb(Zr,Ti)O3 T. Mihara;H. Yoshimori;H. Watanabe;C. Paz de Araujo