Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)
- Volume 8 Issue 2
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- Pages.307-314
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- 1998
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- 1225-1429(pISSN)
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- 2234-5078(eISSN)
Effect of buffer layers on preparation of Sol-Gel processed PZT thin films
Sol-Gel법에 의한 PZT박막 제조에서 완충층의 영향
Abstract
PZT thin films were fabricated by the Sol-gel method. Starting materials used for the preparation of the stock solution were Pb-acetate trihydrate, Zr-normal propoxide and Ti-isopropoxide. 2-Methoxyethanol and iso-propanol were used for solution. For studying the diffusion of Pb ion into the substrates. We used bare Si substrate,
졸-겔법을 이용하여 PZT박막을 제조하였다. 출발물질로는 Pb-acetate trihydrate, Zr-normal propoxide와 Ti-ispropoxide를 사용하였으며, 용매로는 2-Methoxyethanol과 iso- Propanol을 사용하였다. 기판에 따른 Pb 이온 및 Si 이온의 확산을 고찰하기 위해 bare Si와 열산화된
Keywords