Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)
- Volume 35D Issue 8
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- Pages.44-52
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- 1998
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- 1226-5845(pISSN)
Modeling of absorption coefficient and transition energy for intersubband transitions in quantum wells
양자우물에서의 전자의 에너지 부준위간 천이에 의한 광자의 흡수계수와 천이 에너지의 모델링
Abstract
The theoretical modeling of transition energy and absorption coefficient for intersubband transitions in quantum wells in presented. We include, as well as hartree and exchange-correlation potentials, boht depolarization effect and exciton-like effect which play great roles in heavily doped cases where practically reasonable absorption coefficients are available. Also, the calculated results are compared with the existing experimental values for .delta.-doped Si quantum wells to check the validity of our theoretical calculation.
Keywords