Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)
- Volume 35D Issue 7
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- Pages.79-87
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- 1998
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- 1226-5845(pISSN)
Characterizations of nitrided gate oxides by fowler-nordheim tunneling electron injection
Fowler-nordheim 터널링 전자주입에 의한 질화 게이트 산화막의 특성 분석
Abstract
Nitrided oxides which have been investigated as alternative gate oxide for metal-oxide-semiconductor field effect devices were grown by two-step process using N
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