Characterizations of nitrided gate oxides by fowler-nordheim tunneling electron injection

Fowler-nordheim 터널링 전자주입에 의한 질화 게이트 산화막의 특성 분석

Nitrided oxides which have been investigated as alternative gate oxide for metal-oxide-semiconductor field effect devices were grown by two-step process using N$_{2}$O gas, and were chaacterized via a fowler-nordheim tunneling(FNT) electron injection technique. Electrical characteristics of nitrided gate oxides were superior to that of control oxides.Further, the FNT electron injection into the nitrided gate oxides reveals that gate oxides degrade more both if electrons were foreced to inject from the gate metal and if thicker nitrided gate oxides were used in the thickness range of 90~130.angs.. Models are suggested to explain these phenomena.