Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)
- Volume 35D Issue 3
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- Pages.18-27
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- 1998
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- 1226-5845(pISSN)
Molecular dynamics simulation of ultra-low energy ion implantation for GSI device technology development
GSI소자 개발을 위한 극 저 에너지 이온 주입에 대한 분자 역학 시뮬레이션
Abstract
Molecular dynamicsinvestigations of ion implantation considering point defect generation were performed with ion energies in the range of ~1keV, Simulation starts perfect diamond cubic lattice site. Stillinger-Weber potential and ZBL potential were used to calculate forces between atoms. We have simulated slowing-down of ion velocity, ion trajectory and coupled-coing between ion and silicon. We also discussed distribution of point defect using rdial distribution function. We found that interstitial produced by ion bombardment mainly formed interstitial cluster.
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