Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Molecular dynamics simulation of ultra-low energy ion implantation for GSI device technology development

GSI소자 개발을 위한 극 저 에너지 이온 주입에 대한 분자 역학 시뮬레이션

  • 강정원 (중앙대학교 전자공학과 반도체 공정소자 연구실) ;
  • 손명식 (중앙대학교 전자공학과 반도체 공정소자 연구실) ;
  • 황호정 (중앙대학교 전자공학과 반도체 공정소자 연구실)
  • Published : 1998.03.01
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Abstract

Molecular dynamicsinvestigations of ion implantation considering point defect generation were performed with ion energies in the range of ~1keV, Simulation starts perfect diamond cubic lattice site. Stillinger-Weber potential and ZBL potential were used to calculate forces between atoms. We have simulated slowing-down of ion velocity, ion trajectory and coupled-coing between ion and silicon. We also discussed distribution of point defect using rdial distribution function. We found that interstitial produced by ion bombardment mainly formed interstitial cluster.

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