전자공학회논문지D (Journal of the Korean Institute of Telematics and Electronics D)
- 제35D권3호
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- Pages.11-17
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- 1998
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- 1226-5845(pISSN)
베이스 표면재결합상태의 불안정에 의한 GaAs HBT의 열화
Degradation of GaAs HBT induced by instability of base surface recombination states
초록
Although GaAs HBTs are very attractive for high power amplifier because of their power handling capablity, they can't be actively commercialized due to the degradation of current gain occured in hihg current operation. In this paper we analyzed the type of current gain degradation of GaAs HBTs under high constant current stress, and identified the mechanism by using two dimensional numerical simulation. The cause of degradation was found out to be the variation of surface recombination states at the interface between GaAs extrinstic base and the nitride passivating the surface of base. The energy radiated from recombination of carriers in bulk as well as near the surface is estimated to activate the change of the surface states.
키워드