Growth and Properties of CdS Thin films(A Study on the adhesion of II-VI compound semiconductor for applications in light emitting and absorbing devices)

CdS 박막제작 및 그 특성(발광 및 수광 소자 응용을 위한에 II-VI족 화합물 반도체들의 접착에 관한 기초연구)

The structural and optoelectronic properties of polycrystalline CdS films up to several microns in thickness, fabricated by three different methods, are compared to one another for the purpose of preparing CdTe/CdS solar cells. All films were deposited on an indium tin oxide on glass substrate. The three methods are: 1) alternated spraying of cation and anion solution at room temperature; 2) spray pyrolysis with substrate temperature up to $500^{\circ}C$; 3) chemical bath deposition (CBD). Deposited films were thermally treated in various ways. All films showed a well-developed wurtzite structure. Films grown by the alternated-spray method and the chemical bath method consist of randomly-oriented crystallites with dimensions <0.5 microns. Annealing at $400^{\circ}C$ increases the crystallite size slightly. Films which were grown by pyrolysis at substrate temperatures from $400^{\circ}C\;to\;500^{\cir\c}C$ were oriented in the <002> direction. For growth by pyrolysis at $500^{\circ}C$, the surface is rough on a lateral scale of 0.1 to 0.3 microns. The optical band gap and defect states are investigated by optical absorption, photoluminescene, Raman, and photothermal deflection spectroscopies.

CdTe/CdS 태양전지 제작에 필요한 다결정 CdS 박막을 ITO 전도 유리기판위에 SSD법, SPD법 및 CBD법 으로 제작하고 열처리 한 후 그 결정구조와 광학적 특성을 조사하였다. 박막은 모두 Wurtzite 구조를 보였고 SSD법과 CBD법의 박막은 $0.5{\mu}m$ 크기의 CdS 입자가 불규칙적으로 형성되어 증착되어 있음을 보였고, $400^{\circ}C$로 진공중에서 열처리 할 때 입자의 크기가 약간 증가하였다. SPD법의 박막은 (002)방향으로 결정이 성장되고 입자의 크기가 $0.1-0.3{\mu}m$ 이었다. 에너지 밴드갭 및 결함 상태를 광학적 흡수, 광 루미니센스, 라만 및 광 열 편기 스펙트럼(PDS) 측정을 통해 조사하였다.