6H-SiC epitaxial growth and crystal structure analysis

6H-SiC 에피층 성장과 결정구조 해석

A SiC epilayer on the 6H-SiC crystal substrate was grown by chemical vapor deposition (CVD). The crystal structure of the SiC epilayer was investigated by using the X-ray diffraction patterns and the Roman scattering spectroscopy. The SiC epilayer on the 6H-SiC substrate was grown to be homoepilayer by CVD. In order to distinguish a certain SiC polytype mixed in the SiC crystal grown by the modified Lely method, we have calculated the X-ray diffraction intensities and Brags angles of the typical SiC crystal powders. By comparing the measured X-ray diffraction pattern with the calculated ones, it was identified that the SiC crystal grown by the modified Lely method was the 6H-SiC crystal mixed some 15R-SiC.

6H-SiC 위에 SiC 에피층이 화학 기상 증착(CVD)에 의하여 성장되었다. 성장된 SiC 에피층의 결정구조는 X-선 회절과 Raman 분광을 사용하여 조사되었으며, 이 에피층은 6H-SiC로서 성장되었음을 확인하였다. 수정된 Lely법으로 성장된 한 SiC 결정 분말의 결정구조를 확인하기 위하여 전형적인 SiC polytype들의 X-선 회절상을 계산하였으며, 측정된 X-선 회절상과 비교하여 이 SiC 결정에는 15R-SiC가 약간 혼재되어 있음을 확인하였다.