E2M - 전기 전자와 첨단 소재 (Electrical & Electronic Materials)
- 제10권10호
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- Pages.1000-1004
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- 1997
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
서브미크론 MESFET의 DC 특성
The DC Characteristics of Submicron MESFEFs
초록
In this paper the current-voltage characteristics of a submicron GaAs MESFET is simulated by using the self-consistent ensemble Monte Carlo method. The numerical algorithm employed in solving the two-dimensional Poisson equation is the successive over-relaxation(SOR) method. The total number of employed superparticles is about 1000 and the field adjusting time is 10fs. To obtain the steady-state results the simulation is performed for 10ps at each bias condition. The simulation results show the average electron velocity is modified by the gate voltage.
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